Plasma cleaning is mainly based on the generation of a large number of active particles by plasma discharge. Under specific process conditions, these active particles react efficiently with contaminants on the workpiece surface, achieving precise and thorough cleaning.

This technology achieves its cleaning effect primarily through two synergistic reaction mechanisms:

Chemical reaction: Active chemical groups in the plasma (such as oxygen free radicals) react with organic contaminant molecules, breaking their molecular chains and forming unstable intermediates. These ultimately decompose into volatile carbon dioxide and water vapor, which are then extracted by the vacuum system.

Physical reaction: Accelerated by an electric field, high-energy ions bombard the workpiece surface with a certain kinetic energy. This physical collision overcomes the binding forces between contaminant molecules and the substrate surface, causing them to fragment or detach from the surface, achieving a stripping and removal effect (particularly effective for inorganic particles or stubborn deposits).

It is through this unique mechanism of synergistic physical bombardment and chemical reaction that plasma cleaning achieves efficient and damage-free removal of micron- and nanometer-scale contaminants from various surfaces, providing an ideal, clean, and activated interface for subsequent processes.

Removal of organic contaminants using O2 gas

• Cleans inside thin cracks and interior of hollow objects
• No damage to the surface
• Decomposes residue in a molecular level.
• Low process costs
• No hazardous chemical is used